HMC326MS8G InGaP HBT Driver Amplifier SMT, 3.0 - 4.5 GHz
The HMC326MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifier which operates between 3 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dB of gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE.
技术特性
- Psat Output Power: +26 dBm
- > 40% PAE
- Output IP3: +36 dBm
- High Gain: 21 dB
- Vs: +5V
- Ultra Small Package: MSOP8G
应用领域 APPLICATION
- Microwave Radios
- Broadband Radio Systems
- Wireless Local Loop Driver Amplifier
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技术指标
| q. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 3 - 4.5 |
HBT Driver Amplifier |
21 |
36 |
5 |
23.5 |
+5V @ 130mA |
MS8G |
订购信息 Ordering Information
功能框图 Functional Block Diagram
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