HMC358MS8G MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz

The HMC358MS8G & HMC358MS8GE are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC358MS8G & HMC358MS8GE integrate resonators, negative resistance devices, varactor diodes, and buffer amplifi ers. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is 11 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost, surface mount 8 lead MSOP package with an exposed base for improved RF and thermal performance.

技术特性

Pout: +11 dBm
Phase Noise: -110 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: 3V @ 100 mA
15mm2 MSOP8G SMT Package

应用领域 APPLICATION

UNII & Pt. to Pt. Radios
802.11a & HiperLAN WLAN
VSAT Radios

技术指标

Freq. (GHz)	Function	P1dB (dBm), NF (dB)	Max Gain (dB)	Gain Adjust (dB)	Phase Noise @ 1 MHz Offset (dBc/Hz)	Power Dissipation (W)	Package
57 - 64	60 GHz Integrated Receiver	6 dB	67	65	-86	0.61	Chip

订购信息 Ordering Information

HMC358MS8G

功能框图 Functional Block Diagram

应用技术支持与电子电路设计开发资源下载	版本信息	大小
HMC358MS8G 数据资料DataSheet下载:pdf	Rev.V2	2 页