HMC396 InGaP HBT Gain Block Amplifier Chip, DC - 8 GHz
The HMC396 die is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC DC to 8 GHz amplifier. This amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +16 dBm output power. The HMC396 offers 12 dB of gain and an output IP3 of +30 dBm while requiring only 56 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC396 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (0.22mm²) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.5mm (20 mils).
技术特性
- Gain: 12 dB
- P1dB Output Power: +14 dBm
- Stable Gain Over Temperature
- 50 Ohm I/O’s
- Small Size: 0.38 x 0.58 x 0.1 mm
订购信息 Ordering Information
应用领域 APPLICATION
- Microwave & VSAT Radios
- Test Equipment
- Military EW, ECM, C³I
- Space Telecom
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技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| DC - 8 |
HBT Gain Block |
12 |
30 |
6 |
14 |
+5V @ 56mA |
Chip |
功能框图 Functional Block Diagram
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