HMC415LP3 InGaP HBT Power Amplifier SMT, 4.9 - 5.9 GHz
The HMC415LP3(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3(E) achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements.
技术特性
- Gain: 20 dB
- 34% PAE @ Psat = +26 dBm
- 3.7% EVM @ Pout = +15 dBm
- with 54 Mbps OFDM Signal
- Supply Voltage: +3 V
- Power Down Capability
- Low External Part Count
应用领域 APPLICATION
- 802.11a WLAN
- HiperLAN WLAN
- Access Points
- UNII & ISM Radios
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技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 4.9 - 5.9 |
Medium Power Amplifier |
20 |
32 |
6 |
22 |
+3V @ 285mA |
LP3 |
订购信息 Ordering Information
功能框图 Functional Block Diagram
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