HMC455LP3 ½ Watt High IP3 Amplifier SMT, 1.7 - 2.5 GHz
The HMC455LP3(E) is a high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1⁄2 watt MMIC amplifier operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3(E) ideal driver amplifier for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance.
技术特性
- Output IP3: +42 dBm
- Gain: 13 dB
- 56% PAE @ +28 dBm Pout
- +19 dBm W-CDMA
Channel Power @ -45 dBc ACP
- 3x3 mm QFN SMT Package
应用领域 APPLICATION
- Multi-Carrier Systems
- GSM, GPRS & EDGE
- CDMA & WCDMA
- PHS
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 1.7 - 2.5 |
High IP3 Amplifier, 1/2 Watt |
13 |
42 |
6 |
27 |
+5V @ 150mA |
LP3 |
订购信息 Ordering Information
功能框图 Functional Block Diagram
|
