HMC459 Wideband Power Amplifier Chip, DC - 18 GHz
The HMC459 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 18 GHz. The amplifier provides 17 dB of gain, +31.5 dBm output IP3 and +25 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is good making the HMC459 ideal for EW, ECM and radar driver amplifier applications. The HMC459 amplifier I/O’s are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
技术特性
- P1dB Output Power: +25 dBm
- Gain: 17 dB
- Output IP3: +31.5 dBm
- Supply Voltage: +8.0V @ 290 mA
- 50 Ohm Matched Input/Output
- Die Size: 3.12 x 1.63 x 0.1 mm
应用领域 APPLICATION
- Telecom Infrastructure
- Microwave Radio & VSAT
- Military & Space
- Test Instrumentation
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技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| DC - 18 |
Wideband Power Amplifier |
17 |
32 |
3 |
25 |
+8V @ 290mA |
Chip |
订购信息 Ordering Information
功能框图 Functional Block Diagram
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