HMC755LP4E 1 Watt Power Amplifier SMT, 2.3 - 2.8 GHz
The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power amplifier covering 2.3 to 2.8 GHz. The amplifier provides 31 dB of gain and +33 dBm of saturated power from a single +5V supply. The power control pins (VEN1, 2, 3) can be used to reduce the RF output power/quiescent current, or for full power down of the PA. The integrated output power detector (VDET) is internally coupled and requires no external components. For +25 dBm OFDM output power (64 QAM, 54 Mbps), the HMC755LP4E achieves an error vector magnitude (EVM) of only 2.5% making it ideal for WiMAX/LTE/4G Applications. The amplifier is packaged in a compact QFN SMT package and requires a minimum of external matching components.
技术特性
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High Gain: 31 dB
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High PAE: 28% @ +33 dBm Pout
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Low EVM: 2.5% @ Pout = +25 dBm
with 54 Mbps OFDM Signal
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High Output IP3: +43 dBm
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Integrated Detector & Power Control
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24 Lead 4x4mm QFN Package: 16mm
应用领域 APPLICATION
订购信息 Ordering Information
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技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 2.3 - 2.8 |
Power Amplifier, 1 Watt |
31 |
43 |
7 |
32.5 |
+5V @ 430mA |
LP4 |
功能框图 Functional Block Diagram
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