3DG111 型晶体管
- 结构名称：NPN硅高频小功率三极管。
- 等级标记：Ⅱ类
- 主要用途：电视接收机作伴音中放，场同步放大，AGC放大，行AFC电路，伴音低放，电源取样。接收机和无线电设备高频放大和振荡。
- 外形图：B-2型
3DG111 型晶体管
| 序号 | 参数 | 单位 | 测试条件 | 规范值 | |||||||
| 3DG111A | 3DG111B | 3DG111C | 3DG111D | 3DG111E | 3DG111F | ||||||
| 1 | PCM | mW | 300 | ||||||||
| 2 | IC | mA | 50 | ||||||||
| 3 | TjM | ℃ | 175 | ||||||||
| 4 | V(BR)CBO | V | IC=50μA | ≥20 | ≥40 | ≥60 | ≥20 | ≥40 | ≥60 | ||
| 5 | V(BR)CEO | V | IC=50μA | ≥15 | ≥30 | ≥45 | ≥15 | ≥30 | ≥45 | ||
| 6 | V(BR)EBO | V | IE=50μA | ≥4 | ≥4 | ≥4 | ≥4 | ≥4 | ≥4 | ||
| 7 | ICBO | μA | VCB=10V | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ||
| 8 | ICEO | μA | VCE=10V | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ||
| 9 | IEBO | μA | VEB=2V | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ||
| 10 | VBE(sat) | V | Ic=10mA，IB=1mA | ≤ 1 | ≤ 1 | ≤ 1 | ≤ 1 | ≤ 1 | ≤ 1 | ||
| 11 | VCE(sat) | V | Ic=10mA，IB=1mA | ≤0.35 | ≤0.35 | ≤0.35 | ≤0.35 | ≤0.35 | ≤0.35 | ||
| 12 | hFE | VCE=10V，IC=10mA | 25~320 | 25~320 | 25~320 | 25~320 | 25~320 | 25~320 | |||
| 13 | fT | MHz | f=100MHz，VCE=10V，IC=10mA | ≥150 | ≥150 | ≥150 | ≥300 | ≥300 | ≥300 | ||
允许测试误差±10%
NPN型金属封装硅高频小功率晶体管hFE分档表
| hFE | 25~40 | 40~55 | 55~80 | 80~120 | 120~180 | 180~270 | 270~320 |
| 色标 | 橙 | 黄 | 绿 | 蓝 | 紫 | 灰 | 白 |
3DG111 型晶体管B-2 型封状尺寸图
