CF003-03-BD-000V GaAs Pseudomorphic HEMT Transistor
Mimix CF003-03 GaAs-based transistor is a 600 um gate width, sub-half-micron gate length GaAs device with Silicon Nitride passivation. The CF003-03 provides low noise figure and wide dynamic range up to 26 GHz. It is suitable for narrow and wide band amplifiers. Superior gain makes this model useful for high gain feedback amplifiers. Its rugged construction allows it to withstand the same input power as conventional MESFET. The CF003-03 is available in chip form and is suitable for airborne, shipboard and ground-based equipment. The devices are 100% DC tested and every wafer is qualified based on sample RF and reliability testing. Screening includes MIL-STD-750 Class B, Class S and commercial screening. These devices are also available in packaged form. Please consult the CFB0303-B, CFA0303-A datasheets or contact the factory for further information.
技术特性 Features
- Low Noise Figure 1 dB @ 12 GHz
- High Gain: 10 dB at 12 GHz
- P1dB Power: 20 dBm
- Wafer Qualification Procedure
- Customer Wafer Selection Available
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订购信息 Ordering Information
- CF003-03-000X Where “X” is RoHS compliant die packed in “V” - vacuum release gel packs or W” - waffle trays
- CF003-03-BD-000V
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