MA4AGBLP912 AlGaAs Beamlead PIN Diode
M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM Tech’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices. This device is fabricated in a OMCVD system using a process optimized for high device uniformity and extremely low parasitics. The result is a diode with low resistance, 4Ω, low capacitance, 28fF, and an extremely fast switching speed of 5nS. It is fully passivated with silicon nitride and has an additional polymer coating for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling and assembly.
技术特性 Features
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订购信息 Ordering Information
MA4AGBLP912 产品实物图
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| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
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| MA4AGBLP912 数据资料DataSheet下载.PDF | Rev.V2 | 2 页 |
| MA4AGBLP912:S 参数 | 62K |
