The MA4AGSW1A is an Aluminum-Gallium-Arsenide, single pole, single throw (SPST), absorptive PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using M/A-COM Tech’s patented hetero-junction technology. This technology produces a switch with less loss than conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50GHz. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required.
技术特性 Features
订购信息 Ordering Information
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应用领域 APPLICATIONSThe output port of this device, J2, is terminated into 50Ω during isolation mode, which allows this signal to be absorbed rather than reflected back. This functionality makes it ideal for instrumentation and radar applications. An absorptive switch can be added to other AlGaAs reflective switches to improve isolation VSWR and increase isolation magnitude. The ultra low capacitance of the PIN diodes makes it ideal for usage in low loss and high isolation microwave and millimeter wave switch designs through 70 GHz. The lower resistance of the AlGaAs diodes reduces the total insertion loss and distortion of the device. AlGaAs PIN switches are used in applications such as switching arrays for radar systems, radiometers, and other multi-function components. |
| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
| MA4AGSW1A 数据资料DataSheet下载：PDF | Rev.V2 | 2 页 |
| MA4AGSW1A:S 参数 | 11K |
