MA4AGSW4 SP4T AlGaAs PIN Diode Switch

The MA4AGSW4 is an Aluminum-Gallium-Arsenide, single pole, four throw (SP4T), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using M/A-COM Tech’s patented heterojunction technology. This technology produces a switch with less loss than conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50GHz. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required.

技术特性 Features

Ultra Broad Bandwidth : 50 MHz to 50 GHz
Functional Bandwidth : 50 MHz to 70 GHz
0.7 dB Insertion Loss
32 dB Isolation at 50 GHz
Low Current consumption
-10mA for low loss state
+10mA for Isolation state
M/A-COM Tech’s unique AlGaAs hetero-junction anode technology
Silicon Nitride Passivation
Polymer Scratch protection
RoHS Compliant* and 260°C Reflow Compatible

应用领域 APPLICATIONS

The high electron mobility of AlGaAs and the low capacitance of the PIN diodes makes this switch ideal for fast switching, high frequency, multi-throw switch designs. These AlGaAs PIN switches are use in switching arrays for radar systems, radiometers, test equipment and other multi-assembly components.

订购信息 Ordering Information

MA4AGSW4 Waffle Pack

应用技术支持与电子电路设计开发资源下载	版本信息	大小
MA4AGSW4 数据资料DataSheet下载：PDF	Rev.V2	2 页
MA4AGSW4:S 参数		18K