MA4AGSW8-1 SP8T AlGaAs PIN Diode Switch RoHS Compliant

M/A-COM’s MA4AGSW8-1 is an Aluminum-Gallium- Arsenide, single pole, eight throw (SP8T), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using M/A-COM’s patented heterojunction technology. AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. This device is fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes within the chip exhibit low resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage during handling and assembly to the diode junction and the chip anode air-bridges. Off chip bias circuitry is required.

技术特性 Features
  • Ultra Broad Bandwidth: 50 MHz to 40 GHz
  • Functional Bandwidth : 50 MHz to 50 GHz
  • Low Current consumption.
    -10mA for low loss state
    +10mA for Isolation state
  • M/A-COM’s unique AlGaAs hetero-junction anode technology.
  • Silicon Nitride Passivation
  • Polymer Scratch protection
应用领域 APPLICATIONS

The high electron mobility of AlGaAs and the low capacitance of the PIN diodes used makes this switch ideal for fast response, high frequency, multi-throw switch designs. AlGaAs PIN diode switches are an ideal choice for switching arrays in radar systems, radiometers, test equipment and other multi-assembly components.

订购信息 Ordering Information
  • MA4AGSW8-1 Waffle Pack

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MA4AGSW8-1 数据资料DataSheet下载:PDF Rev.V2 2 页
MA4AGSW8-1:S 参数   49K