MA4GP905 GaAs Beamlead PIN Diode
M/A-COM Technology Solutions MA4GP905 is a Gallium-Arsenide, beam-lead PIN diode. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diode exhibits low resistance, 3Ω, low capacitance, 25fF,and an extremely fast switching speed of 3nS. It is fully passivated with silicon nitride and has an additional polymer layer for scratch protection. This protective coating prevents damage to the junction and anode air bridge during handling and assembly.
技术特性 Features
MA4GP905 产品实物图
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订购信息 Ordering Information
应用领域ApplicationsThe ultra low capacitance of the MA4GP905 device makes it ideally suited for use through W-band. The low RC product and low profile of the beamlead PIN diode allows for use in microwave, millimeter wave, switch designs, where low insertion loss and high isolation are required. The operating bias conditions of +20mA for the low loss state, and 0v, for the isolation state permits the use of a simple +5V TTL gate driver. GaAs, beamlead diodes, can be used in switching arrays on radar systems, high speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies. |
| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
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| MA4GP905 数据资料DataSheet下载.pdf | Rev.V2 | 2 页 |
