MA4P_MELF-HIPAX™Series High Power PIN Diodes

M/A-COM Technology Solutions MELF and HIPAX PIN diode are designed for usage in switch and attenuator applications requiring high power handling and low distortion. The MELF and HIPAX PIN diodes incorporate a fully passivated PIN diode chip resulting in an extremely low reverse bias leakage current. The semiconductor technology utilized in the MELF and HIPAX families draws on M/A-COM Tech’s substantial experience in PIN diode design and wafer fabrication. The result is a device which has a thick I-region and long carrier lifetime while maintaining low resistance and capacitance values. The chips of the MELF and HIPAX PIN diodes are enclosed in a rugged ceramic package and is full face bonded to metal pins on both the anode and cathode. The result is a low loss PIN diode with low thermal resistance due to symmetrical thermal paths. The parts are offered in either magnetic or non-magnetic, HIPAX (axial leaded) or Metal Electrode Leadless Faced (MELF) surface mount packages for MRI applications. The MELF is a rectangular SMQ, package which is designed for high volume tape and reel assembly. This easy to use package design makes automatic pick and place, indexing and assembly, extremely easy. The parallel flat surfaces are suitable for most key jaw or vacuum pick-up techniques. All of the solderable surfaces are tin plated and compatible with industry standard reflow and vapor phase soldering processes. See page 7 of Application Note M538 on the M/A-COM Technology Solutions website for a typical solder reflow profile.

技术特性 Features
  • High Power Handling
  • Low Loss / Low Distortion
  • Voltage Ratings up to 1000 Volts
  • Passivated Chip for Low Leakage Current
  • Low Theta (θ) Due to Full Face Chip Bonding
  • Leadless Low Inductance MELF Packages
  • Various Package Options
  • Available as Chips
  • Fully RoHS Compliant
  • Non-Magnetic Packages Available for MRI
应用领域Applications

HIPAX PIN diodes are designed for use in a wide variety of switch and attenuator applications from HF through UHF frequencies and at power levels above 1kW, CW. The internal chip as well as each diode assembly has been comprehensively tested and characterized to ensure predictable and repeatable performance.

MA4P_MELF-HIPAX 产品实物图

MA4P_MELF-HIPAX 产品实物图

订购信息 Ordering Information
  • MA4P1200 - 401T
  • MA4P1200NM - 401T
  • MA4P1250 -1072T
  • MA4P1250NM -1072T
  • MA4P1450 -1091T
  • MA4P1450NM -1091T

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MA4P_MELF-HIPAX™Series 数据资料DataSheet下载.pdf Rev.V2 2 页