MA4SW110 HMIC™ Silicon PIN Diode Switches RoHS Compliant
The MA4SW110, MA4SW210 and MA4SW310 are broadband monolithic switches using and shunt connected silicon PIN diodes. They are designed for use as moderate signal, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beam lead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using M/A-COM’s patented HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metallization allows for manual or automatic chip bonding via 80/20 , AuSn solder or conductive Ag epoxy.
技术特性 Features
- Broad Bandwidth
- Specified from 50 MHz to 20 GHz
- Usable from 50 MHz to 26.5 GHz
- Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs
- Rugged Fully Monolithic, Glass Encapsulated Chip with Polymer Protection Coating
- Up to +30dBm C.W. Power Handling @ +25°C
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订购信息 Ordering Information
- MA4SW110
- MA4SW210
- MA4SW310
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