MA4SW210B-1 HMIC™ Silicon PIN Diode Switches with Integrated Bias Network
The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broadband switches with an integrated bias networks utilizing M/A-COM Technology Solutions HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between circuit elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while full area, gold, backside metallization allows for manual or automatic chip bonding via 80Au/20Sn solders or electrically conductive silver epoxy.
技术特性 Features
- Broad Bandwidth Specified 2 to 18 GHz
- Usable up to 26 GHz
- Integrated Bias Network
- Low Insertion Loss / High Isolation
- Fully Monolithic Construction
- Glass Encapsulate
- Polymer Protective Coating
- RoHS Compliant
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订购信息 Ordering Information
- MA4SW210B-1 Gel Pack
- MA4SW310B-1 Gel Pack
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