MASW-001100-1190 HMIC™ Silicon PIN Diode Switches

The MASW-001100-1190, MASW-002100-1191 and MASW-003100-1192 are broadband monolithic switches using and shunt connected silicon PIN diodes. They are designed for use as 2W, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beamlead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using M/A-COM’s patented HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metallization allows for manual or automatic chip bonding via 80/20, AuSn solder or conductive Ag epoxy.

技术特性 Features
  • Broad Bandwidth
  • Specified from 50MHz to 20GHz
  • Usable from 50MHz to 26.5GHz
  • Lower Insertion Loss / Higher Isolation than pHempt
  • Rugged
  • Fully Monolithic,
  • Glass Encapsulated Construction
  • Up to +33dBm C.W. Power Handling
  • RoHS Compliant
订购信息 Ordering Information
  • MASW-001100-11900W Waffle Pack
  • MASW-001100-11900G Gel Pack
  • MASW-002100-11910W Waffle Pack
  • MASW-002100-11910G Gel Pack
  • MASW-003100-11920W Waffle Pack
  • MASW-003100-11920G Gel Pack

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MASW-001100-1190 数据资料DataSheet下载:PDF Rev.V2 2 页