MASW-002102-13580 HMIC™ Silicon PIN Diode Switches with Integrated Bias Network
The MASW-002102-13580 and MASW-003102-13590 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing M/A-COM Technology Solutions HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy.
技术特性 Features
- Broad Bandwidth Specified up to 18 GHz
- Usable up to 26 GHz
- Integrated Bias Network
- Low Insertion Loss / High Isolation
- Rugged
- Fully Monolithic
- Glass Encapsulate Construction
- RoHS Compliant* and 260°C Reflow Compatible
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订购信息 Ordering Information
- MASW-002102-13580G Gel Pack (25 per)
- MASW-002102-13590W Waffle Pack (25 per)
- MASW-003102-13590G Gel Pack (25 Per)
- MASW-003102-13590W Waffle Pack (25 Per)
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