The MASW-006102-13610 is a SP6T broadband switch with integrated bias network utilizing M/A-COM Technology Solutions HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This wafer fabrication process allows the incorporation of silicon pedestals that form and shunt diodes and vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, plus the combination of silicon and glass gives this HMIC device low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbons or 1 mil wire while full backside gold metallization allows for die attachment using 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy.
技术特性 Features
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应用领域 ApplicationsThe MASW-006102-13160 is a high performance switch which is suitable for use in multi-band ECM, radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80nS switching speeds can be achieved. 订购信息 Ordering Information
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| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
| MASW-006102-13610 数据资料DataSheet下载：PDF | Rev.V2 | 2 页 |
