MASW4030G GaAs SPDT Switch DC - 4.0 GHz

The MASW4030G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 4.0 GHz. The MASW4030G is fabricated using a mature 1-micron gate length GaAs MESFET process. The process features full chip passivation for increased performance and reliability.

技术特性 Features
  • Absorbtive or Reflective
  • Excellent Intermodulation Products
  • Excellent Temperature Stability
  • Fast Switching Speed: 3 ns Typical
  • Ultra Low DC Power Consumption
  • Independent Bias Control
订购信息 Ordering Information
  • MASW4030G DIE
功能框图 Functional Block Diagram

MASW4030G 功能框图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
MASW4030G 数据资料DataSheet下载:PDF Rev.V2 2 页