MRF1000MB Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960–1215 MHz, 18V

Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.

技术特性 Features
  • Guaranteed performance @ 1090 MHz, 18 Vdc — Class A
  • Output power: 0.2W
  • Minimum gain: 10dB
  • 100% tested for load mismatch at all phase angles with 10:1 VSWR
  • Industry standard package
  • Nitride passivated
  • Gold metallized, emitter ballasted for long life and resistance to metal migration
  • Internal input matching for broadband operation

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MRF1000MB数据资料DataSheet下载:PDF Rev.V2 3页