XP1005-BD Power Amplifier 35.0-43.0 GHz
M/A-COM Tech’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power. The device also includes Lange couplers to achieve good output return loss. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
技术特性 Features
- Excellent Saturated Output Stage
- Balanced Design Provides Good Output Match
- 26.0 dB Small Signal Gain
- +24.0 dBm Saturated Output Power
- 100% On-Wafer RF, DC and Output Power Testing
- 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
- RoHS* Compliant and 260°C Reflow Compatible
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订购信息 Ordering Information
- XP1005-BD-000V “V” - vacuum release gel paks
- XP1005-BD-EV1 evaluation module
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