XP1035-BD 5.9-9.5 GHz GaAs MMIC Linear Power Amplifier

The XP1035-BD is a linear power amplifier that operates over the 5.9-9.5GHz frequency band. The device provides 26 dB gain and 39 dBm Output Third Order Intercept Point (OIP3) across the band and is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the part. The device is manufactured in GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. The XP1035-BD is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

技术特性 Features
  • 26 dB Small Signal Gain
  • 39 dBm Third Order Intercept Point (OIP3)
  • Integrated Power Detector
  • 100% On-Wafer RF Testing
订购信息 Ordering Information
  • XP1035-BD
功能框图 Functional Block Diagram

XP1035-BD 功能框图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
XP1035-BD 数据资料DataSheet下载:PDF Rev.V2 2 页