XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz

M/A-COM Tech’s 18.0-21.0/36.0-42.0 GHz GaAs MMIC doubler integrates a doubler and 4-stage power amplifier. The device provides better than +26.0 dBm output power and has excellent fundamental rejection. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

技术特性 Features
  • Integrated Doubler and Power Amplifier
  • Excellent Saturated Output Stage
  • +26.0 dBm Output Power
  • 50.0 dBc Fundamental Suppression
  • 100% On-Wafer RF, DC & Output Power Testing
  • 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
  • RoHS* Compliant and 260°C Reflow Compatible
订购信息 Ordering Information
  • XX1001-BD-000V vacuum release gel paks
  • XX1001-BD-EV1 evaluation board
功能框图 Functional Block Diagram

XX1001-BD 功能框图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
XX1001-BD 数据资料DataSheet下载.pdf Rev.V2 2 页