XX1007-BD Doubler 13.5-17.0/27.0-34.0 GHz

M/A-COM Tech’s 13.5-17.0 / 27.0-34.0 GHz GaAs MMIC doubler integrates a gain stage, passive doubler and driver amplifier onto a single device. The XX1007-BD has a self-biased architecture requiring a single positive supply (+5V) only and integrated on-chip bypassing capacitor eliminating the need for external capacitor. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has integrated ESD structures for protection and surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

技术特性 Features

Integrated Gain, Doubler and Driver Stages
Self-biased Architecture
+21.0 dBm Output Saturated Power
40.0 dBc Fundamental Suppression
On-Chip ESD Protection
100% On-Wafer RF, DC & Output Power Testing
100% Visual Inspection to MIL-STD-883 Method 2010
RoHS* Compliant and 260°C Reflow Compatible

订购信息 Ordering Information

XX1007-BD-000V “V” - vacuum release gel paks
XX1007-BD-EV1 evaluation module

功能框图 Functional Block Diagram

应用技术支持与电子电路设计开发资源下载	版本信息	大小
XX1007-BD 数据资料DataSheet下载.pdf	Rev.V2	2 页