XX1010-QT Doubler 14.625-15.0/29.25-30 GHz

The XX1010-QT is a 14.625-15.0 / 29.25-30.0 GHz GaAs MMIC doubler that integrates a gain stage, passive doubler and driver amplifier onto a single device. This device has a self-biased architecture requiring a single positive supply (+4.5V) only and integrated on-chip bypassing and DC blocking capacitors eliminating the need for any external components. This device uses InGaAs pHEMT device technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The XX1010-QT has integrated ESD structures for protection and comes in a low cost 3 mm QFN package. The device is well suited for millimeter wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

技术特性 Features
  • Integrated Gain, Doubler and Driver Stages
  • +4.5 V Single Positive Bias
  • Integrated Bypassing Capacitor
  • +20 dBm Output Saturated Power
  • 30 dBc Fundamental Suppression
  • On-Chip ESD Protection
  • 100% RF, DC and Output Power Testing
  • Lead-Free 3 mm 16-Lead QFN Package
  • RoHS* Compliant and 260°C Reflow Compatible
订购信息 Ordering Information
  • XX1010-QT-0G00 Bulk Quantity
  • XX1010-QT-0G0T 1000 Piece Reel
  • XX1010-QT-EV1 Evaluation Board
功能框图 Functional Block Diagram

XX1010-QT 功能框图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
XX1010-QT 数据资料DataSheet下载.pdf Rev.V2 2 页