XX1010-QT Doubler 14.625-15.0/29.25-30 GHz

The XX1010-QT is a 14.625-15.0 / 29.25-30.0 GHz GaAs MMIC doubler that integrates a gain stage, passive doubler and driver amplifier onto a single device. This device has a self-biased architecture requiring a single positive supply (+4.5V) only and integrated on-chip bypassing and DC blocking capacitors eliminating the need for any external components. This device uses InGaAs pHEMT device technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The XX1010-QT has integrated ESD structures for protection and comes in a low cost 3 mm QFN package. The device is well suited for millimeter wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

技术特性 Features

Integrated Gain, Doubler and Driver Stages
+4.5 V Single Positive Bias
Integrated Bypassing Capacitor
+20 dBm Output Saturated Power
30 dBc Fundamental Suppression
On-Chip ESD Protection
100% RF, DC and Output Power Testing
Lead-Free 3 mm 16-Lead QFN Package
RoHS* Compliant and 260°C Reflow Compatible

订购信息 Ordering Information

XX1010-QT-0G00 Bulk Quantity
XX1010-QT-0G0T 1000 Piece Reel
XX1010-QT-EV1 Evaluation Board

功能框图 Functional Block Diagram

应用技术支持与电子电路设计开发资源下载	版本信息	大小
XX1010-QT 数据资料DataSheet下载.pdf	Rev.V2	2 页