MGF0909A L & S BAND / 6W non - matched

The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.

技术特性 Features
  • Class A operation
  • High output power
    P1dB=40.0dBm(TYP.) @f=2.3GHz
  • High power gain
    GLP=10.0dB(TYP.) @f=2.3GHz
  • High power added efficiency
    P.A.E =37%(TYP.) @f=2.3GHz,P1dB
  • Hermetically sealed metal-ceramic package with ceramic lid
应用领域 APPLICATION
  • For L/S Band power amplifiers
订购信息 Ordering Information
  • MGF0909A
外观尺寸图 Outline Drawing

MGF0909A 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGF0909A 数据资料DataSheet下载:PDF Rev.V2 2 页