MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched

The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.

技术特性 Features
  • High output power
    Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
  • High power gain
    Gp=13dB(TYP.) @f=2.15GHz
  • High power added efficiency
    add=50%(TYP.) @f=2.15GHz,Pin=20dBm
  • Plastic Mold Lead – less Package
应用领域 APPLICATION
  • For L/S Band power amplifiers
订购信息 Ordering Information
  • MGF0951P

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGF0951P 数据资料DataSheet下载:PDF Rev.V2 2 页