The MGF4851A power InGaAs HEMT (High Electron Mobility Transistor) is designed for use in S to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
技术特性 Features
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应用领域 APPLICATION
订购信息 Ordering Information
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| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
| MGF4851A 数据资料DataSheet下载：PDF | Rev.V2 | 2 页 |
