MGF4941AL Micro-X type plastic package_BDTIC 代理MGF4941AL

MGF4941AL Micro-X type plastic package

The MGF4941AL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers.

技术特性 Features

Low noise figure @ f=12GHz
NFmin. = 0.35dB (Typ.)
High associated gain @ f=12GHz
Gs = 13.5dB (Typ.)

应用领域 APPLICATION

L to K band low noise amplifiers

订购信息 Ordering Information

MGF4941AL

应用技术支持与电子电路设计开发资源下载	版本信息	大小
MGF4941ALAL 数据资料DataSheet下载：PDF	Rev.V2	2 页

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