MGF4941CL Micro-X type plastic package

The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101 qualified.

技术特性 Features
  • Low noise figure @ f=25.2GHz
    NFmin. = 2.4dB (Typ.)
  • High associated gain @ f=25.2GHz
    Gs = 10.0dB (Typ.)
应用领域 APPLICATION
  • K band low noise amplifiers
订购信息 Ordering Information
  • MGF4941CL

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGF4941CLAL 数据资料DataSheet下载:PDF Rev.V2 2 页