MGFC39V5258 5.2 – 5.8 GHz BAND / 8W

The MGFC39V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

技术特性 Features
  • Class A operation
  • Internally matched to 50(ohm) system
  • High output power
    P1dB=8W (TYP.) @f=5.2 – 5.8GHz
  • High power gain
    GLP=9.0dB (TYP.) @f=5.2 – 5.8GHz
  • High power added efficiency
    P.A.E.=30% (TYP.) @f=5.2 – 5.8GHz
应用领域 APPLICATION
  • 5.2 – 5.8 GHz band power amplifier
订购信息 Ordering Information
  • MGFC39V5258
外观尺寸图 Outline Drawing

MGFC39V5258 外观尺寸图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGFC39V5258 数据资料DataSheet下载：PDF Rev.V2 2 页
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