MGFC39V5867 5.8 – 6.75 GHz BAND / 8W
The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
技术特性 Features
应用领域 APPLICATION
订购信息 Ordering Information
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外观尺寸图 Outline Drawing
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| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
| MGFC39V5867 数据资料DataSheet下载：PDF | Rev.V2 | 2 页 |
