MGFC39V5867 5.8 – 6.75 GHz BAND / 8W

The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

技术特性 Features
  • Class A operation
  • Internally matched to 50(ohm) system
  • High output power
    P1dB=8W (TYP.) @f=5.8 – 6.75GHz
  • High power gain
    GLP=9dB (TYP.) @f=5.8 – 6.75GHz
应用领域 APPLICATION
  • VSAT
订购信息 Ordering Information
  • MGFC39V5867
外观尺寸图 Outline Drawing

MGFC39V5867 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGFC39V5867 数据资料DataSheet下载:PDF Rev.V2 2 页