MGFC39V7177A 7.1 – 7.7 GHz BAND / 8W

The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

技术特性 Features
  • Class A operation
  • Internally matched to 50(ohm) system
  • High output power
    P1dB=8W (TYP.) @f=7.1 – 7.7GHz
  • High power gain
    GLP= 8.0dB (TYP.) @f=7.1 – 7.7GHz
  • High power added efficiency
    P.A.E.=28% (TYP.) @f=7.1 – 7.7GHz
  • Low distortion [item -51]
    IM3=-45dBc (TYP.) @Po=28dBm S.C.L
应用领域 APPLICATION
  • item 01 : 7.1 – 7.7 GHz band power amplifier
  • item 51 : 7.1 – 7.7 GHz band digital radio communication
订购信息 Ordering Information
  • MGFC39V7177A
外观尺寸图 Outline Drawing

MGFC39V7177A 外观尺寸图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGFC39V7177A 数据资料DataSheet下载：PDF Rev.V2 2 页
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