MGFC40V5964 5.9 – 6.4 GHz BAND / 10W

The MGFC40V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

技术特性 Features
  • Class A operation
  • Internally matched to 50(ohm) system
  • High output power
    P1dB=10W (TYP.) @f=5.9 – 6.4GHz
  • High power gain
    GLP=10dB (TYP.) @f=5.9 – 6.4GHz
  • High power added efficiency
    P.A.E.=30% (TYP.) @f=5.9 – 6.4GHz
  • Low distortion [item -51]
    IM3=-49dBc (TYP.) @Po=29dBm S.C.L
应用领域 APPLICATION
  • item 01 : 5.9 – 6.4 GHz band power amplifier
  • item 51 : 5.9 – 6.4 GHz band digital radio communication
订购信息 Ordering Information
  • MGFC40V5964
外观尺寸图 Outline Drawing

MGFC40V5964 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGFC40V5964 数据资料DataSheet下载:PDF Rev.V2 2 页