MGFC40V7785 7.7 - 8.5 GHz BAND 10W INTERNALLY MATCHED GaAs FET

The MGFC40V7785 is an internally impedance matched GaAs power FET especially designed for use in 7.7 - 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

技术特性 Features
  • class A operation

  • Internally matched to 50 ohm system
  • High output power
    P1dB = 10W (TYP.) @ f=7.7 - 8.5 GHz
  • High power gain
    GLP =7 dB (TYP.) @ f=7.7 - 8.5 GHz
  • High power added efficiency
    ηadd = 32 % (TYP.) @ f=7.7 - 8.5 GHz,p1db
  • Hermetically sealed metal ceramic package
  • Low Distortion[Item-51]
    IM3=-45 dBc(TYP.)@Po=29 dBm S.C.L.
应用领域 APPLICATION
  • item 01 : 7.7 - 8.5 GHz band power amplifier
  • item 51 : digital radio communication
订购信息 Ordering Information
  • MGFC40V7785
外观尺寸图 Outline Drawing

MGFC40V7785 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGFC40V7785 数据资料DataSheet下载:PDF Rev.V2 2 页