MGFC40V7785 7.7 - 8.5 GHz BAND 10W INTERNALLY MATCHED GaAs FET
The MGFC40V7785 is an internally impedance matched GaAs power FET especially designed for use in 7.7 - 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
技术特性 Features
- class A operation
- Internally matched to 50 ohm system
- High output power
P1dB = 10W (TYP.) @ f=7.7 - 8.5 GHz
- High power gain
GLP =7 dB (TYP.) @ f=7.7 - 8.5 GHz - High power added efficiency
ηadd = 32 % (TYP.) @ f=7.7 - 8.5 GHz,p1db
- Hermetically sealed metal ceramic package
- Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=29 dBm S.C.L.
应用领域 APPLICATION
- item 01 : 7.7 - 8.5 GHz band power amplifier
- item 51 : digital radio communication
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订购信息 Ordering Information
外观尺寸图 Outline Drawing
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