MGFC41V6472 6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET

The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

技术特性 Features
  • Class A operation
  • Internally matched to 50(ohm) system
  • High output power
    P1dB = 12W (TYP.) @ f=6.4~7.2GHz
  • High power gain
    GLP = 9 dB (TYP.) @ f=6.4~7.2GHz
  • High power added efficiency
    P.A.E. = 32 % (TYP.) @ f=6.4~7.2GHz
  • Low distortion [ item -51 ]
    IM3= -45 dBc(TYP.) @Po=30dBm S.C.L.
  • Thermal Resistance
    Rth(ch-c)=- deg.C/W(TYP.)
应用领域 APPLICATION
  • item 01 : 6.4~7.2 GHz band power amplifier
  • item 51 : 6.4~7.2 GHz band digital radio communication
订购信息 Ordering Information
  • MGFC41V6472
外观尺寸图 Outline Drawing

MGFC41V6472 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGFC41V6472 数据资料DataSheet下载:PDF Rev.V2 2 页