MGFC42V5867 5.8 - 6.75 GHz BAND 16W INTERNALLY MATCHED GaAs FET
The MGFC42V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 - 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
技术特性 Features
- Class A operation
- Internally matched to 50(ohm) system
- High output power
P1dB =42.5dBm (TYP.) @ f=5.8 - 6.75 GHz
- High power gain
GLP = 9 dB (TYP.) @ f=5.8 - 6.75GHz
应用领域 APPLICATION
订购信息 Ordering Information
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外观尺寸图 Outline Drawing
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