MGFC45V5867 5.8-6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET
The MGFC45V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8-6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
技术特性 Features
- Class A operation
- Internally matched to 50(ohm) system
- High output power
P1dB = 45.0dBm(TYP.) @ f=5.8-6.75 GHz
- High power gain
GLP =9.8dB (TYP.) @ f=5.8-6.75GHz
应用领域 APPLICATION
订购信息 Ordering Information
|
外观尺寸图 Outline Drawing
|