MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET

The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

技术特性 Features
  • Class A operation
  • Internally matched to 50(ohm) system
  • High output power
    P1dB = 32W (TYP.) @ f=6.4-7.2 GHz
  • High power gain
    GLP = 8 dB (TYP.) @ f=6.4-7.2GHz
  • High power added efficiency
    PAE = 28 % (TYP.) @ f=6.4-7.2GHz
  • Low distortion [item -51]
    IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
应用领域 APPLICATION
  • item 01 : 6.4-7.2 GHz band power amplifier
  • item 51 : 6.4-7.2 GHz band digital radio communication
订购信息 Ordering Information
  • MGFC45V6472A
外观尺寸图 Outline Drawing

MGFC45V6472A 外观尺寸图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGFC45V6472A 数据资料DataSheet下载：PDF Rev.V2 2 页
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