MGFL45V1920A 1.9 – 2.0 GHz BAND / 32W
The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
技术特性 Features
- Class A operation
- Internally matched to 50(ohm) system
- High output power
P1dB=32W (TYP.) @f=1.9 - 2.0GHz
- High power gain
GLP=13.0dB (TYP.) @f=1.9 - 2.0GHz
- High power added efficiency
P.A.E.=45% (TYP.) @f=1.9 - 2.0GHz
- Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L
应用领域 APPLICATION
- item 01 : 1.9 - 2.0 GHz band power amplifier
- item 51 : 1.9 - 2.0 GHz band digital radio communication
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订购信息 Ordering Information
外观尺寸图 Outline Drawing
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