MGFL45V1920A 1.9 – 2.0 GHz BAND / 32W

The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

技术特性 Features
  • Class A operation
  • Internally matched to 50(ohm) system
  • High output power
    P1dB=32W (TYP.) @f=1.9 - 2.0GHz
  • High power gain
    GLP=13.0dB (TYP.) @f=1.9 - 2.0GHz
  • High power added efficiency
    P.A.E.=45% (TYP.) @f=1.9 - 2.0GHz
  • Low distortion [item -51]
    IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L
应用领域 APPLICATION
  • item 01 : 1.9 - 2.0 GHz band power amplifier
  •  item 51 : 1.9 - 2.0 GHz band digital radio communication
订购信息 Ordering Information
  • MGFL45V1920A
外观尺寸图 Outline Drawing

MGFL45V1920A 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGFL45V1920A 数据资料DataSheet下载:PDF Rev.V2 2 页