MGFS45B2527B 2.5 – 2.7 GHz BAND / 30W

The MGFS45B2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 – 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

技术特性 Features
  • Class AB operation
    Internally matched to 50(ohm) system
  • High output power
    Po(SAT)=30W (TYP.) @f=2.5 – 2.7GHz
  • High power gain
    GLP=12.5dB (TYP.) @f=2.5 – 2.7GHz
  • Distortion
    EVM=1.0% (TYP.) @f=2.5 – 2.7GHz, Po=34dBm
    EVM=2.0% (TYP.) @f=2.5 – 2.7GHz, Po=37dBm
订购信息 Ordering Information
  • MGFS45B2527B
外观尺寸图 Outline Drawing

MGFS45B2527B 外观尺寸图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGFS45B2527B 数据资料DataSheet下载：PDF Rev.V2 2 页
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