技术特性 Features

1. Adopting new 4th generation planar IGBT chip, which performance
   is improved by 1μm fine rule process.
   For example, typical VCE(sat)=1.7V
   
2. Using new Diode which is designed to get soft reverse
   recovery characteristics.
   
3. Keeping the package compatibility.
   The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.
   
   • 3φ 150A, 600V Current-sense IGBT for 15kHz switching
     
   • 50A, 600V Current-sense regenerative brake IGBT
     
   • Monolithic gate drive & protection logic
     
   • Detection, protection & status indication circuits for overcurrent,
     short-circuit, over-temperature & under-voltage
     (P-Fo available from upper leg devices)
     
   • Acoustic noise-less 15/18.5kW class inverter application
     
   • UL Recognized Yellow Card No.E80276(N)File No.E80271

PM150RSD060 产品实物图

订购信息 Ordering Information

• PM150RSD060

应用领域 APPLICATION

General purpose inverter, servo drives and other motor controls

功能框图 Functional Block Diagram

外观尺寸图 Outline Drawing