PM200RSD060 FLAT-BASE TYPE INSULATED PACKAGE

技术特性 Features
  1. Adopting new 4th generation planar IGBT chip, which performance
    is improved by 1μm fine rule process.
    For example, typical VCE(sat)=1.7V
  2. Using new Diode which is designed to get soft reverse
    recovery characteristics.
  3. Keeping the package compatibility.
    The layout/position of both terminal pin and mounting hole
    is same as S-series 3rd generation IPM.
    • 3φ 150A, 600V Current-sense IGBT for 15kHz switching
    • 75A, 600V Current-sense regenerative brake IGBT
    • Monolithic gate drive & protection logic
    • Detection, protection & status indication circuits for overcurrent,
      short-circuit, over-temperature & under-voltage
      (P-Fo available from upper leg devices)
    • Acoustic noise-less 15/18.5kW class inverter application
    • UL Recognized Yellow Card No.E80276(N) File No.E80271
应用领域 APPLICATION

General purpose inverter, servo drives and other motor controls

PM200RSD060 产品实物图

PM200RSD060 产品实物图

订购信息 Ordering Information
  • PM200RSD060
功能框图 Functional Block Diagram

PM200RSD060 功能图框

外观尺寸图 Outline Drawing

PM200RSD060 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
PM200RSD060 数据资料DataSheet下载:PDF Rev.V2 2 页