RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER

The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 0.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 1.5V (typical) and 2.0V (maximum). At VGG=2.0V, the typical gate current is 1mA.

技术特性 Features
  • Enhancement-Mode MOSFET Transistors
    (IDD0 @ VDD=3.3V, VGG=0V)
  • Pout>1.4W, ηT>35% @ VDD=3.3V, VGG=2.0V, Pin=30mW
  • Frequency Range: 952-954MHz
  • Low-Power Control Current IGG=1mA (typ) at VGG=2.0V
  • Module Size: 9.1 x 9.2 x 1.8 mm
订购信息 Ordering Information
  • RA01L9595M
  • RA01L9595M -101 Antistatic tray,168 modules/tray
功能框图 Functional Block Diagram

RA01L9595M 功能图框


应用技术支持与电子电路设计开发资源下载 版本信息 大小
RA01L9595M 数据资料DataSheet下载:PDF Rev.V2 2 页