RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO

The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is supplied to the gate voltage 1, the output power and the drain current increase as the gate voltage 2 increases. The output power and the drain current increase substantially with the gate voltage 2 around 0V (minimum) under the condition when the gate voltage 1 is kept in 3.4V. The nominal output power becomes available at the state that VGG2 is 4V (typical) and 5V (maximum). At this point, VGG1 has to be kept in 3.4V. At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltages and controlling the output power with the input power.

技术特性 Features
  • Enhancement-Mode MOSFET Transistors
    (IDD0 @ VDD=12.8V, VGG=0V)
  • Pout>45W, T>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
  • Broadband Frequency Range: 763-870MHz
  • Metal cap structure that makes the improvements of RF radiation
    simple
  • Low-Power Control Current IGG1+IGG2=0.4mA (typ) @ VGG1=3.4V, VGG2=5V
  • Module Size: 67 x 19.4 x 9.9 mm
  • Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.
订购信息 Ordering Information
  • RA45H7687M1
  • RA45H7687M1 -101 Antistatic tray,10 modules/tray
功能框图 Functional Block Diagram

RA45H7687M1 功能图框


应用技术支持与电子电路设计开发资源下载 版本信息 大小
RA45H7687M1 数据资料DataSheet下载:PDF Rev.V2 2 页