RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W

RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.

技术特性 Features
  • High power gain
    Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
应用领域 APPLICATION

For output stage of high power amplifiers in HF Band mobile radio sets.

订购信息 Ordering Information
  • RD00HHS1
外观尺寸图 Outline Drawing

RD00HHS1 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
RD00HHS1 数据资料DataSheet下载:PDF Rev.V2 2 页