RD00HVS1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W

RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

技术特性 Features
  • High power gain
    Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz
应用领域 APPLICATION

For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.

订购信息 Ordering Information
  • RD00HVS1
外观尺寸图 Outline Drawing

RD00HVS1 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
RD00HVS1 数据资料DataSheet下载:PDF Rev.V2 2 页