RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection.

技术特性 Features
  • High power gain:
    Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
  • High Efficiency: 65%typ.
  • Integrated gate protection diode
应用领域 APPLICATION

For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.

订购信息 Ordering Information
  • RD01MUS2
外观尺寸图 Outline Drawing

RD01MUS2 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
RD01MUS2 数据资料DataSheet下载:PDF Rev.V2 2 页